(a) If 5 × 10¹⁷ phosphorus atoms per cm³ are add to silicon as a substitutional impurity, determine the percentage of silicon atoms per unit volume that are displaced in the single crystal lattice.
(b) Repeat part (a) for 2 × 10¹⁵ boron atoms per cm³ added to silicon.

Respuesta :

Answer:

(a) In the single crystal lattice,0.001 % of silicon atoms per unit volume that displaced.

(b)In the single crystal lattice,[tex]4\times 10^{-6} \%[/tex] of silicon atoms per unit volume that displaced.

Explanation:

Unit cell:

  • 8 atoms at the corners at [tex]\frac18[/tex] each cell
  • 6 atoms in the face at [tex]\frac12[/tex] each in cell.
  • 4 atoms within cell.

Total number of atoms per unit cell of silica is  [tex](8\times \frac18+6\times \frac12+4)[/tex]=8 .

Dimension of unit cell is [tex]5.43\times 10^{-8}\ cm[/tex].

The volume occupied by a single Si atom in the crystal structure is

[tex]V_{si}=\frac{a^3 \ cm^3/cell}{\textrm{Number of atom per cell}}[/tex]

    [tex]=\frac{(5.43\times 10^{-8})^3\ cm^3 /cell}{8 \ atoms /cell}[/tex]

   [tex]=2\times 10^{-23}[/tex] [tex]cm^3/atom[/tex]

The concentration of Si atom is

[tex]n_{si}=\frac{1}{V_{Si}}[/tex]

   [tex]=\frac{1}{2\times 10^{-23}\ cm^3/atom}[/tex]

  [tex]=5\times 10^{22}[/tex] [tex]atom/cm^3[/tex]

(a)

[tex]n_P=5\times 10^{17} \ atom/cm^3[/tex]

[tex]PCT=\frac{n_P}{n_{Si}}\times 100[/tex]

        [tex]=\frac{5\times 10^{17} \ atom/cm^3}{5\times 10^{22}\ atom/cm^3}\times 100[/tex]

        [tex]=10^{-3}\%[/tex]

       =0.001 %

In the single crystal lattice,0.001 % of silicon atoms per unit volume that displaced.

(b)

[tex]n_b=2\times 10^{15}\ atom /cm^3[/tex]

[tex]PCT=\frac{n_b}{n_{Si}}\times 100[/tex]

        [tex]=\frac{2\times 10^{15} \ atom/cm^3}{5\times 10^{22}\ atom/cm^3}\times 100[/tex]

        [tex]=4\times 10^{-6}[/tex] %

In the single crystal lattice,[tex]4\times 10^{-6} \%[/tex] of silicon atoms per unit volume that displaced.